Sensor Retroreflective Photoelectric Beam Photocell Sensor G18-3A1NA/PA
- Model:
- G18-3A1NA/PA
The mechanical quantity to be measured, such as displacement, pressure change into an electrical capacitance sensor. Therefore, capacitive sensors can be divided into pole pitch change type, area change type, change the media type categories. Pole pitch change type is generally used to measure the tiny lines or due to force displacement, pressure, vibration caused by the pole pitch changes (see capacitive pressure sensor). Area change type is generally used to measure the angular displacement or larger linear displacement. Change media type commonly used in level measurement and a variety of medium temperature, density determination and humidity.
Model:
| G 18 3 A 40 P A | ||
| 1 2 3 4 5 6 7 8 | ||
| No. | Composition | Code and definition |
| 1 | Basic form | G: infrared ray photoelectric switch |
| 2 | Outward appearance code | 18,50,76 |
| 3 | Working voltage | 2.90-250VAC 3:10-30VDC 4:12-240VDC/24-240VAC 5:Special voltage |
| 4 | Detection way | A: diffused reflection type(scattered reflection type) |
| B: feedbace reflection type mirror(mirror reflection type) | ||
| C: penetration type(correlation type) D: marking detection type | ||
| G: optical fiber type | ||
| 5 | Detection distance | 05: 5cm 10: 10cm 30: 30cm 101: 10m |
| 6 | Output form | N: NPN transistor output P:PNP transistor output J: Relay contact output L:AC two-wire output S: with two outputs: NPN and PNP |
| 7 | Output state | A: Normally open(light entering ON) B: Normally close(light sheltering ON) |
| C: Normally open+ normally close | ||
| 8 | Subsidiary | T1: front delay T2: rear delay Y: |
| T: with aviation connector I: special requirement | ||
Technical Parameter
|
OVERALL DIMENSIONS |
 |
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|
D i f f u s e T y p e |
Detection distance | 10cm-10cm | ||
|
10- 10 VDC |
NPN |
NO | G18-3A10NA | |
| NC | G18-3A10NB | |||
| NO+NC | G18-3A10NC | |||
|
PNP |
NO | G18-3A10PA | ||
|
90～ 250 VAC |
NC | G18-3A10PB | ||
| NO+NC | G18-3A10PC | |||
|
SCR ControHable silicon |
NO | G18-2A10LA | ||
| NC | G18-2A10LB | |||
| Relay output | ||||
|
R e t r o r e f l i c t i v e |
Detection distance | 2m | ||
|
10- 10 VDC |
NPN |
NO | G18-3B2NA | |
| NC | G18-3B2NB | |||
| NO+NC | G18-3B2NC | |||
|
PNP |
NO | G18-3B2PA | ||
|
90～ 250 VAC |
NC | G18-3B2PB | ||
| NO+NC | G18-3B2PC | |||
|
SCR ControHable silicon |
NO | G18-2B2LA | ||
| NC | G18-2B2LB | |||
| Relay output | ||||
|
T r o u g h b e a m |
Detection distance | 5m | ||
|
10- 10 VDC |
NPN |
NO | G18-3C5NA | |
| NC | G18-3C5NB | |||
| NO+NC | G18-3C5NC | |||
|
PNP |
NO | G18-3C5PA | ||
|
90～ 250 VAC |
NC | G18-3C5PB | ||
| NO+NC | G18-3C5PC | |||
|
SCR ControHable silicon |
NO | G18-2C5LA | ||
| NC | G18-2C5LB | |||
| Relay output | ||||
| DC/SCR／Control output | DC:200mA、AC：100mA | |||
| DC/AC Consumption current | DC<15mA、AC<10mA | |||
| DC/AC Response time | Dc<2ms、AC<2mA | |||
| Directional angle | 3。-10。 | |||
| Detected object | transparent or opaque body | |||
| WoJrking envlrOnment temDerature | 25℃～+55℃ | |||
| Intensity ofillumination ofworking environment | 10000LX Sunlight underlOOOOLX 1000LX incandescentlamp under 1000LX | |||
| Shell materia | Plastic | |||
| Protection grade | IP54 | |||
